SI4800BDY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4800BDY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):9 A 13 nC
| Parameter | Value |
|---|---|
| Gate Charge | 13 nC |
| Gate to Source Threshold Voltage | 800 mV |
| Continuous Drain Current (ID) | 9 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 18.5 mΩ |
| Gate to Source Voltage (Vgs) | -25 V, 25 V |
| Power Dissipation | 2.5 W |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 4859
Distributors
pcbx
pcbxUnit Price$0.85750
Ext.Price$0.85750
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.85750 | $0.85750 |
| 10 | $0.53690 | $5.36900 |
| 25 | $0.46840 | $11.71000 |
| 50 | $0.40864 | $20.43200 |
| 100 | $0.35650 | $35.65000 |
| 300 | $0.31666 | $94.99800 |
| 500 | $0.28127 | $140.63500 |
| 1000 | $0.25391 | $253.91000 |
| 3000 | $0.23296 | $698.88000 |
| 5000 | $0.21373 | $1068.65000 |
| 10000 | $0.20860 | $2086.00000 |