SIHG20N50C-E3
Manufacturer:
Vishay
Mfr.Part #:
SIHG20N50C-E3
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 250 W 500 V Continuous Drain Current (ID):20 A 65 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 292 W |
| Power Dissipation | 250 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 2.942 nF |
| Continuous Drain Current (ID) | 20 A |
| Rds On Max | 270 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 80 ns |
| Turn-Off Delay Time | 32 ns |
| Fall Time | 44 ns |
| Rise Time | 27 ns |
| Gate Charge | 65 nC |
| Drain to Source Resistance | 225 mΩ |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 500 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
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