TK32E12N1,S1X
Manufacturer:
Toshiba
Mfr.Part #:
TK32E12N1,S1X
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 98 W 120 V Continuous Drain Current (ID):60 A 34 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Output Current | 1.4 A |
| Max Power Dissipation | 98 W |
| Power Dissipation | 98 W |
| Number of Channels | 1 |
| Input capacitance | 2 nF |
| Continuous Drain Current (ID) | 60 A |
| Rds On Max | 13.8 mΩ |
| Drain to Source Voltage (Vdss) | 120 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-Off Delay Time | 43 ns |
| Element Configuration | Single |
| Fall Time | 14 ns |
| Rise Time | 14 ns |
| Gate Charge | 34 nC |
| Drain to Source Resistance | 11 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 120 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 12
Distributors
pcbx
pcbxUnit Price$1.05658
Ext.Price$1.05658
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.05658 | $1.05658 |
| 10 | $1.03267 | $10.32670 |
| 25 | $1.02515 | $25.62875 |
| 50 | $1.01768 | $50.88400 |
| 100 | $1.01026 | $101.02600 |