2N2857
Manufacturer:
Microsemi
Mfr.Part #:
2N2857
Datasheet:
Description:
BJTs TO-72 Through Hole NPN 200 mW Collector Base Voltage (VCBO):30 V Collector Emitter Voltage (VCEO):15 V Emitter Base Voltage (VEBO):3 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 200 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 4 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | NPN |
| Frequency | 1.6 GHz |
| Number of Elements | 1 |
| Max Power Dissipation | 200 mW |
| Power Dissipation | 200 mW |
| Max Collector Current | 40 mA |
| Collector Emitter Breakdown Voltage | 15 V |
| Transition Frequency | 500 MHz |
| Gain | 21 dB |
| Collector Emitter Voltage (VCEO) | 15 V |
| Gain Bandwidth Product | 1.9 GHz |
| Collector Base Voltage (VCBO) | 30 V |
| Collector Emitter Saturation Voltage | 15 V |
| Emitter Base Voltage (VEBO) | 3 V |
| Max Cutoff Collector Current | 40 mA |
| Transistor Type | NPN |
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