2N7002K-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
2N7002K-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 350 mW 60 V Continuous Drain Current (ID):300 mA 400 pC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 2 Ω |
| Height | 1.02 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 60 V |
| REACH SVHC | Unknown |
| Weight | 1.437803 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 3 A |
| Max Power Dissipation | 350 mW |
| Power Dissipation | 350 mW |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 30 pF |
| Continuous Drain Current (ID) | 300 mA |
| Rds On Max | 2 Ω |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Gate Charge | 400 pC |
| Drain to Source Resistance | 2 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 65638
Distributors
pcbx
pcbxUnit Price$0.10042
Ext.Price$0.10042
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.10042 | $0.10042 |
| 10 | $0.05021 | $0.50210 |
| 50 | $0.04587 | $2.29350 |
| 100 | $0.04190 | $4.19000 |
| 500 | $0.03617 | $18.08500 |
| 1000 | $0.03122 | $31.22000 |
| 3000 | $0.02695 | $80.85000 |
| 5000 | $0.02470 | $123.50000 |