2SA1312-BL(TE85L,F
Manufacturer:
Toshiba
Mfr.Part #:
2SA1312-BL(TE85L,F
Datasheet:
Description:
BJTs SC-59-3 SMD/SMT PNP 150 mW Collector Base Voltage (VCBO):-120 V Collector Emitter Voltage (VCEO):300 mV Emitter Base Voltage (VEBO):-5 V
| Parameter | Value |
|---|---|
| Length | 2.9 mm |
| Width | 1.5 mm |
| Max Operating Temperature | 125 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 1.1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Contact Plating | Copper, Silver, Tin |
| Frequency | 100 MHz |
| Number of Elements | 1 |
| Max Power Dissipation | 150 mW |
| Power Dissipation | 150 mW |
| Max Collector Current | 100 mA |
| Collector Emitter Breakdown Voltage | 120 V |
| Transition Frequency | 100 MHz |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 300 mV |
| Max Breakdown Voltage | 120 V |
| Gain Bandwidth Product | 100 MHz |
| Collector Base Voltage (VCBO) | -120 V |
| Collector Emitter Saturation Voltage | -300 mV |
| Emitter Base Voltage (VEBO) | -5 V |
| hFE Min | 200 |
| Max Cutoff Collector Current | 15 nA |
| Transistor Type | PNP |
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