4N60L-B-TN3-R
Manufacturer:
UTC
Mfr.Part #:
4N60L-B-TN3-R
Datasheet:
Description:
MOSFETs TO-252 SMD/SMT N-Channel number of channels:1 50 W 600 V Continuous Drain Current (ID):4.4 A 100 nC
| Parameter | Value |
|---|---|
| Gate Charge | 100 nC |
| Gate to Source Threshold Voltage | 2 V to 4 V |
| Continuous Drain Current (ID) | 4.4 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 2.5 Ω |
| Input capacitance | 670 pF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 50 W |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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