AP4435GJ
Manufacturer:
VBsemi
Mfr.Part #:
AP4435GJ
Datasheet:
Description:
MOSFETs TO-251 Through Hole P-Channel number of channels:1 40 W -30 V Continuous Drain Current (ID):-40 A 38 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 40 W |
| Number of Channels | 1 |
| Input capacitance | 1.45 nF |
| Continuous Drain Current (ID) | -40 A |
| FET Type(Transistor Polarity) | P-Channel |
| Gate Charge | 38 nC |
| Drain to Source Resistance | 18 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Gate to Source Threshold Voltage | -1 V to -2.5 V |
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