APT50GS60BRDQ2G
Manufacturer:
Microsemi
Mfr.Part #:
APT50GS60BRDQ2G
Datasheet:
Description:
IGBTs TO-247-3 Through Hole Single 600 V 415 W 93 A
| Parameter | Value |
|---|---|
| Length | 21.46 mm |
| Width | 16.26 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Height | 5.31 mm |
| Packaging | Tube |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Weight | 38 g |
| Lifecycle Status | Production |
| Max Power Dissipation | 415 W |
| Power Dissipation | 415 W |
| Max Collector Current | 93 A |
| Collector Emitter Breakdown Voltage | 600 V |
| Reverse Recovery Time | 25 ns |
| Continuous Collector Current | 93 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 600 V |
| Collector Emitter Saturation Voltage | 2.8 V |
| Maximum Gate Emitter Voltage | 30 V |
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