AUIRFR5305
Manufacturer:
Infineon
Mfr.Part #:
AUIRFR5305
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT P-Channel number of channels:1 110 W 55 V Continuous Drain Current (ID):31 A 63 nC
| Parameter | Value |
|---|---|
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 65 MΩ |
| Height | 2.39 mm |
| Packaging | Tube |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 110 W |
| Power Dissipation | 110 W |
| Threshold Voltage | -2 V |
| Number of Channels | 1 |
| Input capacitance | 1.2 nF |
| Continuous Drain Current (ID) | 31 A |
| Rds On Max | 65 mΩ |
| Drain to Source Voltage (Vdss) | -55 V |
| Turn-On Delay Time | 14 ns |
| Turn-Off Delay Time | 39 ns |
| Element Configuration | Single |
| Rise Time | 66 ns |
| Gate Charge | 63 nC |
| Drain to Source Resistance | 65 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 55 V |
| On-State Resistance | 65 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
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