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BCR573E6327HTSA1

Manufacturer:

Infineon

Mfr.Part #:

BCR573E6327HTSA1

Datasheet:
Description:

BJTs SOT-3 SMD/SMT PNP 330 mW Collector Base Voltage (VCBO):5 V Collector Emitter Voltage (VCEO):50 V

ParameterValue
Voltage Rating (DC)-50 V
Length2.9 mm
Width1.3 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height900 µm
PackagingReel
Halogen FreeNot Halogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
PolarityPNP
Current Rating-500 mA
Lifecycle StatusNRND (Last Updated: 1 year ago)
Max Power Dissipation330 mW
Power Dissipation330 mW
Max Collector Current500 mA
Collector Emitter Breakdown Voltage50 V
Transition Frequency150 MHz
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)50 V
Max Breakdown Voltage50 V
Collector Base Voltage (VCBO)5 V
Collector Emitter Saturation Voltage300 mV
hFE Min70
Schedule B8541210080
Package Quantity3000
Input Resistance1 kΩ
Max Cutoff Collector Current100 nA
Transistor TypePNP

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