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BSC046N10NS3GATMA1

Manufacturer:

Infineon

Mfr.Part #:

BSC046N10NS3GATMA1

Datasheet:
Description:

MOSFETs PG-TDSON-8 SMD/SMT N-Channel number of channels:1 156 W 100 V Continuous Drain Current (ID):17 A 63 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
PackagingReel
Halogen FreeHalogen Free
Lead FreeContains Lead
RoHSCompliant
Number of Elements1
Lifecycle StatusObsolete (Last Updated: 10 months ago)
Max Power Dissipation156 W
Power Dissipation156 W
Number of Channels1
Input capacitance4.5 nF
Continuous Drain Current (ID)17 A
Rds On Max4.6 mΩ
Drain to Source Voltage (Vdss)100 V
FET Type(Transistor Polarity)N-Channel
Rise Time14 ns
Gate Charge63 nC
Drain to Source Resistance4.6 mΩ
Max Dual Supply Voltage100 V
Gate to Source Voltage (Vgs)-20 V, 20 V
Drain to Source Breakdown Voltage (Vds)100 V
On-State Resistance4.6 mΩ
Schedule B8541290080
Package Quantity5000

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