BSP295H6327XTSA1
Manufacturer:
Infineon
Mfr.Part #:
BSP295H6327XTSA1
Datasheet:
Description:
MOSFETs SOT-223 SMD/SMT N-Channel number of channels:1 1.8 W 60 V Continuous Drain Current (ID):1.8 A 14 nC
| Parameter | Value |
|---|---|
| Length | 6.5 mm |
| Width | 3.5 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Height | 1.6 mm |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 1.8 W |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 1.1 V |
| Number of Channels | 1 |
| Input capacitance | 295 pF |
| Continuous Drain Current (ID) | 1.8 A |
| Rds On Max | 300 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 5.4 ns |
| Turn-Off Delay Time | 27 ns |
| Element Configuration | Single |
| Fall Time | 19 ns |
| Rise Time | 9.9 ns |
| Dual Supply Voltage | 60 V |
| Gate Charge | 14 nC |
| Drain to Source Resistance | 220 mΩ |
| Nominal Vgs | 1.1 V |
| Max Dual Supply Voltage | 60 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| On-State Resistance | 300 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 800 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2
Distributors
pcbx
pcbxUnit Price$0.63734
Ext.Price$0.63734
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.63734 | $0.63734 |
| 10 | $0.62410 | $6.24100 |
| 25 | $0.61977 | $15.49425 |
| 50 | $0.61547 | $30.77350 |
| 100 | $0.61120 | $61.12000 |