BSS214NWH6327
Manufacturer:
Infineon
Mfr.Part #:
BSS214NWH6327
Datasheet:
Description:
MOSFETs SOT-323-3 SMD/SMT N-Channel number of channels:1 500 mW 20 V Continuous Drain Current (ID):1.5 A 0.8 nC
| Parameter | Value |
|---|---|
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 800 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| RoHS | Compliant |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | 950 mV |
| Number of Channels | 1 |
| Input capacitance | 107 pF |
| Continuous Drain Current (ID) | 1.5 A |
| Rds On Max | 140 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 4.1 ns |
| Turn-Off Delay Time | 6.8 ns |
| Element Configuration | Single |
| Rise Time | 7.8 ns |
| Gate Charge | 0.8 nC |
| Drain to Source Resistance | 106 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Max Dual Supply Voltage | 20 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| On-State Resistance | 140 mΩ |
| Schedule B | 8541210080 |
| Package Quantity | 3000 |
| Gate to Source Threshold Voltage | 950 mV |
| FET Type(Transistor Polarity) | N-Channel |
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