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CS4N65A3HD

Manufacturer:

Huajing

Mfr.Part #:

CS4N65A3HD

Datasheet:
Description:

MOSFETs TO-251 Through Hole N-Channel number of channels:1 75 W 650 V Continuous Drain Current (ID):4 A 14.5 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
PackagingTube
RoHSCompliant
Power Dissipation75 W
Number of Channels1
Input capacitance544 pF
Continuous Drain Current (ID)4 A
FET Type(Transistor Polarity)N-Channel
Gate Charge14.5 nC
Drain to Source Resistance2.5 Ω
Gate to Source Voltage (Vgs)-30 V, 30 V
Drain to Source Breakdown Voltage (Vds)650 V
Gate to Source Threshold Voltage4 V

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