DF200R12W1H3_B27
Manufacturer:
Infineon
Mfr.Part #:
DF200R12W1H3_B27
Datasheet:
Description:
IGBTs Module Chassis Mount 1.2 kV 375 W 30 A
| Parameter | Value |
|---|---|
| Maximum Gate Emitter Voltage | -20 V, 20 V |
| Power Dissipation | 375 W |
| Min Operating Temperature | -40 °C |
| Max Operating Temperature | 150 °C |
| Collector Emitter Saturation Voltage | 1.3 V |
| RoHS | Compliant |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Max Collector Current | 30 A |
| Packaging | Tray |
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