F3L50R06W1E3_B11
Manufacturer:
Infineon
Mfr.Part #:
F3L50R06W1E3_B11
Datasheet:
Description:
IGBTs Module Through Hole IGBT-Inverter 600 V 175 W 75 A
| Parameter | Value |
|---|---|
| Maximum Gate Emitter Voltage | -20 V, 20 V |
| Power Dissipation | 175 W |
| Element Configuration | IGBT-Inverter |
| Min Operating Temperature | -40 °C |
| Max Operating Temperature | 150 °C |
| Collector Emitter Saturation Voltage | 1.45 V |
| RoHS | Compliant |
| Collector Emitter Voltage (VCEO) | 600 V |
| Max Collector Current | 75 A |
| Packaging | Tray |
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