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F3L75R12W1H3_B11

Manufacturer:

Infineon

Mfr.Part #:

F3L75R12W1H3_B11

Datasheet:
Description:

IGBTs Module Quad 1.2 kV 275 W 75 A

ParameterValue
Maximum Gate Emitter Voltage-20 V, 20 V
Power Dissipation275 W
Element ConfigurationQuad
Min Operating Temperature-40 °C
Max Operating Temperature150 °C
Collector Emitter Saturation Voltage1.45 V
RoHSCompliant
Collector Emitter Voltage (VCEO)1.2 kV
Max Collector Current75 A
PackagingTray

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