GC11N65F
Manufacturer:
GOFORD
Mfr.Part #:
GC11N65F
Datasheet:
Description:
MOSFETs TO-220F Through Hole N-Channel number of channels:1 31.3 W 650 V Continuous Drain Current (ID):11 A 21 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 31.3 W |
| Number of Channels | 1 |
| Input capacitance | 901 pF |
| Continuous Drain Current (ID) | 11 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 21 nC |
| Drain to Source Resistance | 360 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 4 V |
Stock: 16
Distributors
pcbx
pcbxUnit Price$0.65126
Ext.Price$0.65126
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.65126 | $0.65126 |
| 10 | $0.52944 | $5.29440 |
| 25 | $0.48511 | $12.12775 |
| 50 | $0.44448 | $22.22400 |
| 100 | $0.38819 | $38.81900 |
| 300 | $0.36905 | $110.71500 |
| 500 | $0.35085 | $175.42500 |
| 1000 | $0.33223 | $332.23000 |