GC11N65T
Manufacturer:
GOFORD
Mfr.Part #:
GC11N65T
Datasheet:
Description:
MOSFETs TO-220 Through Hole N-Channel number of channels:1 78 W 650 V Continuous Drain Current (ID):11 A 21 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 78 W |
| Number of Channels | 1 |
| Input capacitance | 901 pF |
| Continuous Drain Current (ID) | 11 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 21 nC |
| Drain to Source Resistance | 360 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 4 V |
Stock: 23
Distributors
pcbx
pcbxUnit Price$0.79517
Ext.Price$0.79517
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.79517 | $0.79517 |
| 10 | $0.65472 | $6.54720 |
| 25 | $0.57858 | $14.46450 |
| 50 | $0.51130 | $25.56500 |
| 100 | $0.44639 | $44.63900 |
| 300 | $0.42462 | $127.38600 |
| 500 | $0.40391 | $201.95500 |
| 1000 | $0.38199 | $381.99000 |