GT68N12T
Manufacturer:
GOFORD
Mfr.Part #:
GT68N12T
Datasheet:
Description:
MOSFETs TO-220 Through Hole N-Channel number of channels:1 192 W 120 V Continuous Drain Current (ID):110 A 68.9 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 192 W |
| Number of Channels | 1 |
| Input capacitance | 5.823 nF |
| Continuous Drain Current (ID) | 110 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 68.9 nC |
| Drain to Source Resistance | 5 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 120 V |
| Gate to Source Threshold Voltage | 4 V |
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