HAT2016RJ
Manufacturer:
VBsemi
Mfr.Part #:
HAT2016RJ
Datasheet:
Description:
MOSFETs SO-8 SMD/SMT N-Channel 2.7 W 30 V Continuous Drain Current (ID):10 A 5.6 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 2.7 W |
| Input capacitance | 586 pF |
| Continuous Drain Current (ID) | 10 A |
| Gate Charge | 5.6 nC |
| Drain to Source Resistance | 22 mΩ |
| Gate to Source Voltage (Vgs) | ±20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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