HN1B04FE-GR,LF
Manufacturer:
Toshiba
Mfr.Part #:
HN1B04FE-GR,LF
Datasheet:
Description:
BJTs SOT-666 SMD/SMT NPN, PNP 100 mW Collector Base Voltage (VCBO):60 V, -50 V Collector Emitter Voltage (VCEO):250 mV Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Polarity | NPN, PNP |
| Output Current | 1.4 A |
| Max Power Dissipation | 100 mW |
| Power Dissipation | 100 mW |
| Max Collector Current | 150 mA |
| Collector Emitter Breakdown Voltage | 50 V |
| Transition Frequency | 80 MHz |
| Collector Emitter Voltage (VCEO) | 250 mV |
| Max Breakdown Voltage | 50 V |
| Gain Bandwidth Product | 80 MHz, 80 MHz |
| Collector Base Voltage (VCBO) | 60 V, -50 V |
| Collector Emitter Saturation Voltage | 100 mV |
| Emitter Base Voltage (VEBO) | 5 V |
| Max Cutoff Collector Current | 100 nA |
| Transistor Type | NPN, PNP |
Stock: 501
Distributors
pcbx
pcbxUnit Price$0.12374
Ext.Price$0.12374
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.12374 | $0.12374 |
| 10 | $0.11040 | $1.10400 |
| 50 | $0.09850 | $4.92500 |
| 100 | $0.08594 | $8.59400 |
| 500 | $0.07498 | $37.49000 |
| 1000 | $0.07027 | $70.27000 |
| 3000 | $0.06586 | $197.58000 |