HP640
Manufacturer:
Haolin
Mfr.Part #:
HP640
Datasheet:
Description:
MOSFETs TO-220 Through Hole N-Channel number of channels:1 104 W 200 V Continuous Drain Current (ID):18 A 41 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 104 W |
| Number of Channels | 1 |
| Input capacitance | 1.318 nF |
| Continuous Drain Current (ID) | 18 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 41 nC |
| Drain to Source Resistance | 120 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Gate to Source Threshold Voltage | 4 V |
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