HSBB3062
Manufacturer:
HUASHUO
Mfr.Part #:
HSBB3062
Datasheet:
Description:
MOSFETs P-PAK 3x3 SMD/SMT N-Channel number of channels:1 26 W 30 V Continuous Drain Current (ID):36 A 4.2 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 26 W |
| Number of Channels | 1 |
| Input capacitance | 1396 pF |
| Continuous Drain Current (ID) | 36 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 4.2 nC |
| Drain to Source Resistance | 10.5 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Gate to Source Threshold Voltage | 1.7 V |
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