HSP200N02
Manufacturer:
HUASHUO
Mfr.Part #:
HSP200N02
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 200 W 200 V Continuous Drain Current (ID):70 A 110 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 200 W |
| Number of Channels | 1 |
| Input capacitance | 5.082 nF |
| Continuous Drain Current (ID) | 70 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 110 nC |
| Drain to Source Resistance | 27 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Gate to Source Threshold Voltage | 3 V to 5 V |
Stock: 1
Distributors
pcbx
pcbxUnit Price$1.29629
Ext.Price$1.29629
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.29629 | $1.29629 |
| 10 | $1.07184 | $10.71840 |
| 25 | $1.00838 | $25.20950 |
| 50 | $0.94867 | $47.43350 |
| 100 | $0.81810 | $81.81000 |
| 300 | $0.78599 | $235.79700 |
| 500 | $0.75515 | $377.57500 |
| 1000 | $0.72740 | $727.40000 |