HY1920W
Manufacturer:
Huayi
Mfr.Part #:
HY1920W
Datasheet:
Description:
MOSFETs TO-247 Through Hole N-Channel number of channels:1 375 W 200 V Continuous Drain Current (ID):90 A 130 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 375 W |
| Number of Channels | 1 |
| Input capacitance | 5.871 nF |
| Continuous Drain Current (ID) | 90 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 130 nC |
| Drain to Source Resistance | 23 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Gate to Source Threshold Voltage | 3 V |
Stock: 103
Distributors
pcbx
pcbxUnit Price$1.49299
Ext.Price$1.49299
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.49299 | $1.49299 |
| 10 | $1.23446 | $12.34460 |
| 25 | $1.14246 | $28.56150 |
| 50 | $1.05731 | $52.86550 |
| 100 | $0.97851 | $97.85100 |
| 300 | $0.90558 | $271.67400 |
| 500 | $0.83808 | $419.04000 |