IGT60R190D1S
Manufacturer:
Infineon
Mfr.Part #:
IGT60R190D1S
Datasheet:
Description:
MOSFETs PG-HSOF-8-3 SMD/SMT N-Channel number of channels:1 55.5 W 600 V Continuous Drain Current (ID):12.5 A 3.2 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 55.5 W |
| Number of Channels | 1 |
| Input capacitance | 157 pF |
| Continuous Drain Current (ID) | 12.5 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 3.2 nC |
| Drain to Source Resistance | 190 mΩ |
| Gate to Source Voltage (Vgs) | -10 V, 10 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 900 mV |
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