IPA80R1K0CE
Manufacturer:
Infineon
Mfr.Part #:
IPA80R1K0CE
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 32 W 800 V Continuous Drain Current (ID):5.7 A
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Height | 19.6 mm |
| Packaging | Tube |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 32 W |
| Power Dissipation | 32 W |
| Number of Channels | 1 |
| Input capacitance | 785 pF |
| Continuous Drain Current (ID) | 5.7 A |
| Rds On Max | 950 mΩ |
| Drain to Source Voltage (Vdss) | 800 V |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 72 ns |
| Drain to Source Resistance | 830 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Max Dual Supply Voltage | 800 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| On-State Resistance | 950 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 500 |
| FET Type(Transistor Polarity) | N-Channel |
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