IPA90R800C3
Manufacturer:
Infineon
Mfr.Part #:
IPA90R800C3
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 33 W 900 V Continuous Drain Current (ID):6.9 A 42 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Tube |
| Halogen Free | Halogen Free |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 33 W |
| Power Dissipation | 33 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 1.1 nF |
| Continuous Drain Current (ID) | 6.9 A |
| Rds On Max | 800 mΩ |
| Drain to Source Voltage (Vdss) | 900 V |
| Turn-On Delay Time | 70 ns |
| Turn-Off Delay Time | 400 ns |
| Element Configuration | Single |
| Fall Time | 32 ns |
| Rise Time | 20 ns |
| Gate Charge | 42 nC |
| Drain to Source Resistance | 800 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 900 V |
| On-State Resistance | 800 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 500 |
| Gate to Source Threshold Voltage | 3.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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