IPAN60R360PFD7S
Manufacturer:
Infineon
Mfr.Part #:
IPAN60R360PFD7S
Datasheet:
Description:
MOSFETs TO-220-3 Full Pack Through Hole N-Channel number of channels:1 23 W 600 V Continuous Drain Current (ID):10 A 12.7 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 23 W |
| Number of Channels | 1 |
| Input capacitance | 534 pF |
| Continuous Drain Current (ID) | 10 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 12.7 nC |
| Drain to Source Resistance | 714 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 4 V |
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