IPAN80R360P7
Manufacturer:
Infineon
Mfr.Part #:
IPAN80R360P7
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 30 W 800 V Continuous Drain Current (ID):13 A 30 nC
| Parameter | Value |
|---|---|
| Gate Charge | 30 nC |
| Gate to Source Threshold Voltage | 2.5 V |
| Continuous Drain Current (ID) | 13 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 310 mΩ |
| Power Dissipation | 30 W |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
| Input capacitance | 930 pF |
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