IPB026N06N
Manufacturer:
Infineon
Mfr.Part #:
IPB026N06N
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 136 W 60 V Continuous Drain Current (ID):100 A 66 nC
| Parameter | Value |
|---|---|
| Gate Charge | 66 nC |
| Gate to Source Threshold Voltage | 2.1 V |
| Continuous Drain Current (ID) | 100 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 2.3 mΩ |
| Input capacitance | 4.1 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 136 W |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 248
Distributors
pcbx
pcbxUnit Price$1.66349
Ext.Price$1.66349
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.66349 | $1.66349 |
| 10 | $1.52448 | $15.24480 |
| 25 | $1.46890 | $36.72250 |
| 50 | $1.41534 | $70.76700 |
| 100 | $1.36372 | $136.37200 |
| 300 | $1.34320 | $402.96000 |
| 500 | $1.32298 | $661.49000 |
| 1000 | $1.30484 | $1304.84000 |