IPB042N10N3G
Manufacturer:
Infineon
Mfr.Part #:
IPB042N10N3G
Datasheet:
Description:
MOSFETs TO-263 SMD/SMT N-Channel number of channels:1 214 W 100 V Continuous Drain Current (ID):100 A 88 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.7 mm |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Power Dissipation | 214 W |
| Number of Channels | 1 |
| Input capacitance | 6.32 nF |
| Continuous Drain Current (ID) | 100 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 27 ns |
| Turn-Off Delay Time | 48 ns |
| Rise Time | 59 ns |
| Gate Charge | 88 nC |
| Drain to Source Resistance | 3.6 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Max Dual Supply Voltage | 100 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 4.2 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
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