IPB072N15N3G
Manufacturer:
Infineon
Mfr.Part #:
IPB072N15N3G
Datasheet:
Description:
MOSFETs PG-TO263-3 SMD/SMT N-Channel number of channels:1 300 W 150 V Continuous Drain Current (ID):100 A 70 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| RoHS | Compliant |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Power Dissipation | 300 W |
| Number of Channels | 1 |
| Input capacitance | 5.47 nF |
| Continuous Drain Current (ID) | 100 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 46 ns |
| Rise Time | 35 ns |
| Gate Charge | 70 nC |
| Drain to Source Resistance | 5.8 mΩ |
| Max Dual Supply Voltage | 150 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 150 V |
| On-State Resistance | 7.2 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
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