IPB120N10S4-05
Manufacturer:
Infineon
Mfr.Part #:
IPB120N10S4-05
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 190 W 100 V Continuous Drain Current (ID):120 A 91 nC
| Parameter | Value |
|---|---|
| Gate Charge | 91 nC |
| Gate to Source Threshold Voltage | 2.7 V |
| Continuous Drain Current (ID) | 120 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 5 mΩ |
| Input capacitance | 6.54 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 190 W |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 4
Distributors
pcbx
pcbxUnit Price$2.81213
Ext.Price$2.81213
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.81213 | $2.81213 |
| 10 | $2.74992 | $27.49920 |
| 25 | $2.73189 | $68.29725 |
| 50 | $2.71398 | $135.69900 |
| 100 | $2.69621 | $269.62100 |