IPB80N03S4L03ATMA1
Manufacturer:
Infineon
Mfr.Part #:
IPB80N03S4L03ATMA1
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 136 W 30 V Continuous Drain Current (ID):80 A 140 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.7 mm |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 1 year ago) |
| Power Dissipation | 136 W |
| Number of Channels | 1 |
| Input capacitance | 5.1 nF |
| Continuous Drain Current (ID) | 80 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 37 ns |
| Rise Time | 6 ns |
| Gate Charge | 140 nC |
| Drain to Source Resistance | 2 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Max Dual Supply Voltage | 30 V |
| Gate to Source Voltage (Vgs) | -16 V, 16 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 3.4 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1 V |
| Drain to Source Breakdown Voltage | 30 V |
| FET Type(Transistor Polarity) | N-Channel |
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