IPB80N06S2-08
Manufacturer:
Infineon
Mfr.Part #:
IPB80N06S2-08
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 215 W 55 V Continuous Drain Current (ID):80 A 96 nC
| Parameter | Value |
|---|---|
| Gate Charge | 96 nC |
| Gate to Source Threshold Voltage | 4 V |
| Continuous Drain Current (ID) | 80 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 7.7 mΩ |
| Input capacitance | 2.86 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 215 W |
| Drain to Source Breakdown Voltage (Vds) | 55 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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