IPD50P04P4L11ATMA1
Manufacturer:
Infineon
Mfr.Part #:
IPD50P04P4L11ATMA1
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT P-Channel number of channels:1 58 W 40 V Continuous Drain Current (ID):50 A 45 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Output Current | 1.4 A |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Power Dissipation | 58 W |
| Number of Channels | 1 |
| Input capacitance | 3.9 nF |
| Continuous Drain Current (ID) | 50 A |
| Drain to Source Voltage (Vdss) | -40 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 46 ns |
| Fall Time | 39 ns |
| Rise Time | 9 ns |
| Gate Charge | 45 nC |
| Drain to Source Resistance | 8.2 mΩ |
| Max Dual Supply Voltage | -40 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| On-State Resistance | 10.6 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 2500 |
| Gate to Source Threshold Voltage | 1.2 V |
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