IPD60N10S4-12
Manufacturer:
Infineon
Mfr.Part #:
IPD60N10S4-12
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 94 W 100 V Continuous Drain Current (ID):60 A 34 nC
| Parameter | Value |
|---|---|
| Gate Charge | 34 nC |
| Gate to Source Threshold Voltage | 2.7 V |
| Continuous Drain Current (ID) | 60 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 12.2 mΩ |
| Input capacitance | 1.9 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 94 W |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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