IPD60R1K4C6
Manufacturer:
Infineon
Mfr.Part #:
IPD60R1K4C6
Datasheet:
Description:
MOSFETs TO-252 SMD/SMT N-Channel number of channels:1 28.4 W 600 V Continuous Drain Current (ID):3.2 A 9.4 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 28.4 W |
| Power Dissipation | 28.4 W |
| Number of Channels | 1 |
| Input capacitance | 200 pF |
| Continuous Drain Current (ID) | 3.2 A |
| Rds On Max | 1.4 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge | 9.4 nC |
| Drain to Source Resistance | 1.26 Ω |
| Max Dual Supply Voltage | 600 V |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| On-State Resistance | 1.4 Ω |
| Schedule B | 8541290080 |
| Package Quantity | 2500 |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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