IPD60R360P7ATMA1
Manufacturer:
Infineon
Mfr.Part #:
IPD60R360P7ATMA1
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 41 W 600 V Continuous Drain Current (ID):9 A 13 nC
| Parameter | Value |
|---|---|
| Gate Charge | 13 nC |
| Gate to Source Threshold Voltage | 3 V |
| Continuous Drain Current (ID) | 9 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 305 mΩ |
| Input capacitance | 555 pF |
| Power Dissipation | 41 W |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1
Distributors
pcbx
pcbxUnit Price$1.08048
Ext.Price$1.08048
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.08048 | $1.08048 |
| 10 | $1.05734 | $10.57340 |
| 25 | $1.03415 | $25.85375 |
| 50 | $1.01147 | $50.57350 |
| 100 | $0.98930 | $98.93000 |