IPD60R3K3C6ATMA1
Manufacturer:
Infineon
Mfr.Part #:
IPD60R3K3C6ATMA1
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 18.1 W 600 V Continuous Drain Current (ID):1.7 A 4.6 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 18.1 W |
| Number of Channels | 1 |
| Input capacitance | 93 pF |
| Continuous Drain Current (ID) | 1.7 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 4.6 nC |
| Drain to Source Resistance | 3.3 Ω |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 3 V |
Stock: 1546
Distributors
pcbx
pcbxUnit Price$0.58109
Ext.Price$0.58109
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.58109 | $0.58109 |
| 10 | $0.46608 | $4.66080 |
| 25 | $0.41940 | $10.48500 |
| 50 | $0.37740 | $18.87000 |
| 100 | $0.33960 | $33.96000 |
| 300 | $0.32177 | $96.53100 |
| 500 | $0.30487 | $152.43500 |
| 1000 | $0.28673 | $286.73000 |