IPD65R190C7
Manufacturer:
Infineon
Mfr.Part #:
IPD65R190C7
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 72 W 650 V Continuous Drain Current (ID):13 A 23 nC
| Parameter | Value |
|---|---|
| Gate Charge | 23 nC |
| Gate to Source Threshold Voltage | 3 V |
| Continuous Drain Current (ID) | 13 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 190 mΩ |
| Input capacitance | 1.15 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 72 W |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 769
Distributors
pcbx
pcbxUnit Price$2.05867
Ext.Price$2.05867
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.05867 | $2.05867 |
| 10 | $1.33882 | $13.38820 |
| 25 | $1.20753 | $30.18825 |
| 50 | $1.08911 | $54.45550 |
| 100 | $0.98231 | $98.23100 |
| 300 | $0.90070 | $270.21000 |
| 500 | $0.82586 | $412.93000 |
| 1000 | $0.70703 | $707.03000 |