IPD65R225C7
Manufacturer:
Infineon
Mfr.Part #:
IPD65R225C7
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 63 W 650 V Continuous Drain Current (ID):11 A 20 nC
| Parameter | Value |
|---|---|
| Gate Charge | 20 nC |
| Gate to Source Threshold Voltage | 4 V |
| Continuous Drain Current (ID) | 11 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 225 mΩ |
| Power Dissipation | 63 W |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
| Input capacitance | 996 pF |
Stock: 2156
Distributors
pcbx
pcbxUnit Price$1.77141
Ext.Price$1.77141
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.77141 | $1.77141 |
| 10 | $1.10799 | $11.07990 |
| 25 | $0.98408 | $24.60200 |
| 50 | $0.87402 | $43.70100 |
| 100 | $0.77627 | $77.62700 |
| 300 | $0.71066 | $213.19800 |
| 500 | $0.65060 | $325.30000 |
| 1000 | $0.64462 | $644.62000 |
| 3000 | $0.58123 | $1743.69000 |
| 5000 | $0.52407 | $2620.35000 |