IPD70R1K4P7S
Manufacturer:
Infineon
Mfr.Part #:
IPD70R1K4P7S
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 22.7 W 700 V Continuous Drain Current (ID):4 A 4.7 nC
| Parameter | Value |
|---|---|
| Gate Charge | 4.7 nC |
| Gate to Source Threshold Voltage | 2.5 V |
| Continuous Drain Current (ID) | 4 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Drain to Source Resistance | 1.15 Ω |
| Input capacitance | 158 pF |
| Gate to Source Voltage (Vgs) | -16 V, 16 V |
| Power Dissipation | 22.7 W |
| Drain to Source Breakdown Voltage (Vds) | 700 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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