IPD80R1K4CEATMA1
Manufacturer:
Infineon
Mfr.Part #:
IPD80R1K4CEATMA1
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 63 W 800 V Continuous Drain Current (ID):3.9 A 23 nC
| Parameter | Value |
|---|---|
| Gate Charge | 23 nC |
| Gate to Source Threshold Voltage | 3 V |
| Continuous Drain Current (ID) | 3.9 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 1.4 Ω |
| Power Dissipation | 63 W |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
| Input capacitance | 570 pF |
Stock: 1100
Distributors
pcbx
pcbxUnit Price$1.01394
Ext.Price$1.01394
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.01394 | $1.01394 |
| 10 | $0.66343 | $6.63430 |
| 25 | $0.62581 | $15.64525 |
| 50 | $0.54345 | $27.17250 |
| 100 | $0.47192 | $47.19200 |
| 300 | $0.42324 | $126.97200 |
| 500 | $0.37959 | $189.79500 |
| 1000 | $0.34283 | $342.83000 |
| 3000 | $0.31194 | $935.82000 |
| 5000 | $0.28384 | $1419.20000 |