IPD80R2K8CE
Manufacturer:
Infineon
Mfr.Part #:
IPD80R2K8CE
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 42 W 800 V Continuous Drain Current (ID):1.9 A 12 nC
| Parameter | Value |
|---|---|
| Gate Charge | 12 nC |
| Gate to Source Threshold Voltage | 2.1 V |
| Continuous Drain Current (ID) | 1.9 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 2.4 Ω |
| Input capacitance | 290 pF |
| Power Dissipation | 42 W |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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