IPD900P06NM
Manufacturer:
Infineon
Mfr.Part #:
IPD900P06NM
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT P-Channel number of channels:1 63 W 60 V Continuous Drain Current (ID):16.4 A 27 nC
| Parameter | Value |
|---|---|
| Gate Charge | 27 nC |
| Gate to Source Threshold Voltage | 2.1 V |
| Continuous Drain Current (ID) | 16.4 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 90 Ω |
| Input capacitance | 1.1 nF |
| Power Dissipation | 63 W |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 51
Distributors
pcbx
pcbxUnit Price$0.73306
Ext.Price$0.73306
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.73306 | $0.73306 |
| 10 | $0.58589 | $5.85890 |
| 25 | $0.53384 | $13.34600 |
| 50 | $0.48641 | $24.32050 |
| 100 | $0.44319 | $44.31900 |
| 300 | $0.42085 | $126.25500 |
| 500 | $0.39964 | $199.82000 |
| 1000 | $0.37714 | $377.14000 |