IPDD60R080G7
Manufacturer:
Infineon
Mfr.Part #:
IPDD60R080G7
Datasheet:
Description:
MOSFETs PG-HDSOP-10-1 SMD/SMT N-Channel number of channels:1 174 W 600 V Continuous Drain Current (ID):29 A 42 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 174 W |
| Number of Channels | 1 |
| Input capacitance | 1.64 nF |
| Continuous Drain Current (ID) | 29 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 42 nC |
| Drain to Source Resistance | 80 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 3 V |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||